In semiconductor manufacturing, the 3 nm process is the next die shrink after the 5 nanometer MOSFET (metal–oxide–semiconductor field-effect transistor) technology node. South Korean chipmaker Samsung started shipping its 3 nm gate all around (GAA) process, named 3GAA, in mid-2022. On December 29, 2022, Taiwanese chip manufacturer TSMC announced that volume production using its 3 nm semiconductor node termed N3 is under way with good yields. An enhanced 3 nm chip process called N3E may start production in 2023. American manufacturer Intel plans to start 3 nm production in 2023.Samsung's 3 nm process is based on GAAFET (gate-all-around field-effect transistor) technology, a type of multi-gate MOSFET technology, while TSMC's 3 nm process still uses FinFET (fin field-effect transistor) technology, despite TSMC developing GAAFET transistors. Specifically, Samsung plans to use its own variant of GAAFET called MBCFET (multi-bridge channel field-effect transistor). Intel's process dubbed "Intel 3" without the "nm" suffix will use a refined, enhanced and optimized version of FinFET technology compared to its previous process nodes in terms of performance gained per watt, use...